BLM2010E Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – N-Channel Enhancement Mode Power MOSFET

ROHS Product
BLM2010E
N-Channel Enhancement Mode Power MOSFET
Description
The BLM2010E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =7A
Typ.RDS(ON)= 16mΩ @ VGS=4.5V
Typ.RDS(ON)= 20mΩ @ VGS=2.5V
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●PWM application
●Load switch
TSSOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
2010E
BLM2010E
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250µA
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
Page1
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Limit
20
±12
7
30
1.5
-55 To 150
Unit
V
V
A
A
W
℃
83.3
℃ /W
Min Typ Max Unit
20
-
-
-
V
1
µA
V3.1