BLM2006NE Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement Mode Power MOSFET
Pb Free Product
BLM2006NE
Description
The BLM2006NE uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =7A
RDS(ON) < 27mΩ @ VGS=2.5V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●PWM application
●Load switch
Schematic diagram
Marking and pin Assignment
SOT23-6L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
2006NE
BLM2006NE
SOT23-6L
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
30
1.25
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
℃ /W
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