BLM2004NE Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – N-Channel Enhancement Mode Power MOSFET

Pb Free Product
BLM2004NE
N-Channel Enhancement Mode Power MOSFET
Description
The BLM2004NE uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =6A
Typ.R_DS(ON) = 17mΩ @ V_GS=4.5V
Typ.R_DS(ON) = 22mΩ @ V_GS=2.5V
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●PWM application
●Load switch
Schematic diagram
Marking and pin Assignment
SOT23-6L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
2004NE
BLM2004NE
SOT23-6L
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
6
30
1.25
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
℃ /W
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