BLM138K Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – N-Channel Enhancement Mode Power MOSFET

Pb Free Product
BLM138K
N-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
● V_DS = 50V,I_D = 0.22A
R_DS(ON) < 3Ω @ V_GS=5V
R_DS(ON) < 2Ω @ V_GS=10V
ESD Rating：HBM 2300V
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
138K
BLM138K
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=50V,V_GS=0V
Limit
50
±20
0.22
0.88
0.35
-55 To 150
Unit
V
V
A
A
W
℃
350
℃/W
Min Typ Max Unit
50 65
-
V
-
-
1
μA
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