BLH3355 Datasheet, PDF (1/2 Pages) SHANGHAI BELLING CO., LTD. – NPN EPITAXIAL SILICON RF TRANSISTOR CHIP

BLH3355
NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355)
Description
NPN epitaxial silicon RF transistor for
microwave low-noise amplification
Features
Low noise and high gain bandwidth product
High power gain
Applications
UHF / VHF wide band amplifier
Structure
Planar type
Electrodes: Aluminum alloy
Backside metal: Au alloy
Size
Chip size: 370µm ×370µm
Chip thickness: 220±20µm.
Pad size: φ100µm
ABSOLUTE MAXIMUM RATING
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Value
20
12
3.0
100
200
150
−65 to +150
Unit
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
T_j = 25^oC unless otherwise specified
Symbol
Parameter
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
DC Current Gain
Test conditions
VCB=10V, IE=0mA
VEB=1.0V, IC=0mA
VCE =10V, IC=20mA
Min. Typ. Max. Unit
-
-
1.0
µA
-
-
1.0
µA
50
120 250
nA
http://www.belling.com.cn
-1-
Total 2 Pages
8/18/2006