BL8596 Datasheet, PDF (1/4 Pages) SHANGHAI BELLING CO., LTD. – LDO mode OVP with Integrated P-MOSFET

BL8596
LDO mode OVP with Integrated P-MOSFET
DESCRIPTION
The BL8596 is Li+ charger IC with integrated P-
MOSFET. The device is fabricated with advanced
CMOS technology to achieve maintaining low static
power dissipation over a very broad VCC operating
range.
The BL8596 integrates a P-MOSFET and Schottky
diode which is normally a discrete device
employed for conventional battery charging
design of mobile phone system. In addition to
that, BL8596 works like a LDO mode to keep
CHRIN voltage stable when ACIN goes high. And
thus it will not trigger the CHRIN pin over-voltage
protection when ACIN voltage increased to as
high as 15V.
FEATURES
 A Built-In P-MOSFET
 LDO mode makes CHRIN voltage stable around
5.5V
 Range of operation input voltage: Max 15V
 Charging current up to 1A
 Environment Temperature: -20C~85C
APPLICATIONS
 Cell phone and other portable device
APPLICATION CIRCUIT
The BL8596 provides complete Li+ charger
protections and saves the external MOSFET and
Schottky diode for the charger of cell phone’s PMIC.
It is available in a DFN2x2-8L package.
BL8596
The above features and small package make the
BL8596 an ideal part for cell phones applications.
ORDERING INFORMATION / PIN CONFIGURATION / MARKING
BL8596CKBTR
DFN2x2-8L
BL8596CB6TR
SOT23-6L
Top Marking
OBYW
YW means the year and week parts being manufactured, subjected to change. OB is the code of the product;
it will not be changed on any part.
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