BL8593 Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – P-Channel MOSFET with 0.12V Schottky Diode

BL8593
P-Channel MOSFET with 0.12V Schottky Diode
DESCRIPTION
BL8593 is designed for battery charging controller,
which features P-channel MOSFET characteristics
and a 0.12V Schottky diode for reverse current
blocking. Such reverse current blocking feature cut
off the current when source voltage is removed, or
lower than drain voltage, no matter the gate
voltage indicating the P-MOSFET on or off.
FEATURES
 PMOSFET with SBD for reverse current blocking
 0.12V Schottky diode forward voltage
 Range of operation input voltage: Max 12V
 Charging current up to 650mA
 Environment Temperature: -20C~85C
APPLICATIONS
BL8593 is also suitable for high side switch in a
system with multi power supplies, when isolating
different power supplies becomes essential.
BL8593 can block reverse voltage as high as 10V. So
it is safe enough for mobile phone system or other
portable device powered by 1 cell Li-ion battery.
 Cell phone and other portable device
FUNCTION DIAGRAM
BL8593 is available in DFN2x2-6L (2 type of PIN
configuration), SC70-5 and DFN1x1-5. Especially
with the package DFN1x1-5, BL8593 make itself the
smallest package available in the world.
ORDERING INFORMATION / PIN CONFIGURATION / MARKING
BL8593CKCTR
DFN2x2-6L
(compatible to DFN2x3
pin out)
BL8593CBKCTR
DFN2x2-6L
(compatible to
DFN2x2 pin out)
BL8593CA5TR
SC70-5
BL8593CKDTR
DFN1x1-5L
1. A
6. K
OA
2. S
5. D
YW
3. G
4. NC
1. A
6. K
OA|
2. NC
5. G
YW
3. D
4. S
1. S
5. NC
OA
2. G
YW
3. NC
4. D
Notice: YW means the year and week parts being manufactured, subjected to change. OA is the
code of the product, it will not be changed on any part.
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