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AP2114 Datasheet, PDF (9/28 Pages) BCD Semiconductor Manufacturing Limited – 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Electrical Characteristics (Continued)
AP2114-3.3 Electrical Characteristics (Note 2)
(VIN=4.3V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Voltage
VOUT
VIN =4.3V, 1mA ≤ IOUT ≤ 30mA
Maximum Output Current
Load Regulation
Line Regulation
Dropout Voltage
IOUT(MAX)
△VOUT/VOUT
△IOUT
△VOUT/VOUT
△VIN
VDROP
VIN =4.3V, VOUT=3.25V to 3.35V
VIN=4.3V, 1mA ≤ IOUT ≤1A
4.3V≤VIN≤6V, IOUT=30mA
IOUT=1A
Quiescent Current
Power Supply Rejection
Ratio
Output Voltage
Temperature Coefficient
Short Current Limit
RMS Output Noise
VEN High Voltage
VEN Low Voltage
Standby Current
Start-up Time
EN Pull Down Resistor
VOUT Discharge Resistor
Thermal
Shutdown
Temperature
Thermal
Shutdown
Hysteresis
IQ
PSRR
△VOUT/VOUT
△T
ISHORT
VNOISE
VIH
VIL
ISTD
TS
RPD
RDCHG
TOTSD
THYOTSD
VIN=4.3V, IOUT=0mA
Ripple 1Vp-p
VIN=4.3V,
IOUT=100mA
f=100Hz
f=1KHz
IOUT=30mA
VOUT=0V
10Hz ≤ f ≤100kHz (No load)
Enable logic high, regulator on
Enable logic low, regulator off
VIN=3.5V, VEN in OFF mode
No Load
Set EN pin at Low
SOIC-8
Thermal Resistance
(Junction to Case)
PSOP-8
θJC
SOT-223
TO-252-2 (1) / TO-252-2 (3)
TO-263-3
VOUT
×98.5%
3.3
VOUT
×101.5%
V
1.0
A
0.2 1.0 %/A
0.02 ±0.1 %/V
450 750 mV
65
90
µA
65
dB
65
±30
ppm/°C
50
mA
30
µVRMS
1.5
V
0.4
0.01 1.0
µA
20
µs
3.0
mΩ
60
Ω
160
°C
25
74.6
43.7
50.9
°C /W
35
22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Oct. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
9