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AP2112_12 Datasheet, PDF (8/20 Pages) BCD Semiconductor Manufacturing Limited – 600mA CMOS LDO REGULATOR WITH ENABLE
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Electrical Characteristics (Continued)
AP2112-2.5 Electrical Characteristic (Note 2)
VIN=3.5V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output Current
Load Regulation
Line Regulation
Symbol
Test Conditions
Min
VOUT
IOUT(MAX)
(△VOUT/VOUT)/
△IOUT
(△VOUT/VOUT)/
△VIN
VIN =3.5V, 1mA ≤ IOUT ≤ 30mA
VOUT
*98.5%
VIN=3.5V,
2.537V
VOUT=2.463V
to
600
VOUT=2.5V,
VIN=VOUT+1V,
1mA ≤ IOUT ≤600mA
-1
3.5V≤VIN≤6V, IOUT=30mA
-0.1
IOUT =10mA
Typ Max Unit
2.5
VOUT
*101.5%
V
mA
0.2
1
%/A
0.02
0.1 %/V
5
8
Dropout Voltage
VDROP
IOUT =300mA
125
200
mV
IOUT=600mA
250
400
Quiescent Current
IQ
VIN=3.5V, IOUT=0mA
55
80
µA
Standby Current
ISTD
VIN=3.5V, VEN in OFF mode
0.01
1.0
µA
Power Supply Rejection
Ratio
PSRR
Ripple 0.5Vp-p f=100Hz
VIN=3.5V,
IOUT=100mA f=1KHz
Output Voltage
Temperature Coefficient
Short Current Limit
(△VOUT/VOUT)/
△T
IOUT=30mA
TA =-40°C to
85°C
ISHORT
VOUT=0V
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
VEN High Voltage
VIH
Enable logic high, regulator on 1.5
VEN Low Voltage
VIL
Enable logic low, regulator off
0
Start-up Time
tS
No Load
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
RDCHG
TOTSD
THYOTSD
Set EN pin at Low
SOT-23-5
65
65
±100
50
50
20
3.0
60
160
25
96
dB
ppm/°C
mA
µVRMS
6.0
V
0.4
µs
MΩ
Ω
°C
Thermal Resistance
θJC
SOIC-8
75
°C/W
SOT-89-5
47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Mar. 2012 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
8