MBR10100C_11 Datasheet, PDF (6/10 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Typical Performance Characteristics
Data Sheet
MBR10100C
100
10
T_J=150^oC
1
0.1
T_J=125^oC
T_J=25^oC
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage Per Diode
10000
1000
T_J=150^oC
100
T_J=125^oC
10
1
0.1
T_J=25^oC
0.01
1E-3
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Current Per Diode
10
9
8
7
6
5
4
3
2
1
0
100 105 110 115 120 125 130 135 140 145 150 155
Case Temperature (^oC)
Figure 6. Average Forward Current vs.
Case Temperature (Per Diode)
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6