AP2125 Datasheet, PDF (6/27 Pages) BCD Semiconductor Manufacturing Limited – 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics
AP2125-1.8 Electrical Characteristics
(V_IN=2.8V, T_A=25^oC, C_IN=1µF, C_OUT=1µF, Bold typeface applies over -40^oC≤T_J≤85^oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Load Regulation
Line Regulation
Dropout Voltage
Quiescent Current
Symbol
V_OUT
V_IN
I_OUT(MAX)
V_RLOAD
V_RLINE
V_DROP
I_Q
Conditions
Min Typ Max Unit
V_IN=2.8V
1mA≤I_OUT≤30mA
1.764 1.8 1.836 V
6
V
V_IN-V_OUT=1V, V_OUT=1.76V
300
360
mA
V_IN=2.8V
1mA≤I_OUT≤300mA
6
mV
2.8V≤V_IN≤6V
I_OUT=30mA
1
mV
I_OUT=10mA
I_OUT=100mA
10
12
100 120 mV
I_OUT=300mA
300 360
V_IN=2.8V, I_OUT=0mA
60
90
µA
Standby Current
Power Supply
Rejection Ratio
I_STD
PSRR
V_IN=2.8V
V_CE in OFF mode
Ripple 0.5Vp-p ^f=100Hz
V_IN=2.8V
f=1KHz
Output Voltage
Temperature Coefficient
(∆V_OUT/V_OUT)/∆T I_OUT=30mA
Short Current Limit
RMS Output Noise
CE "High" Voltage
I_SHORT
V_NOISE
V_OUT=0V
10Hz ≤f≤100kHz
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
Thermal Shutdown
Thermal Shutdown Hyster-
esis
0.01
1.0
µA
70
dB
70
dB
±100
ppm/^oC
50
mA
50
µVrms
1.5
V
0.4
V
160
o_C
25
o_C
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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