English
Language : 

AP1661 Datasheet, PDF (6/13 Pages) BCD Semiconductor Manufacturing Limited – POWER FACTOR CORRECTION CONTROLLER
Data Sheet
POWER FACTOR CORRECTION CONTROLLER
AP1661
Electrical Characteristics (Continued)
VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified.
Parameter
Current Sense Section
Input Bias Current
Current Sense Offset Volt-
age
Symbol
ICS
VCS-OFFSET
Current Sense Reference
Clamp
VCS-CLAMP
Delay to Output
td(H-L)
Zero Current Detection Section
Test Conditions
VCS =0V
VMULT=0V
VMULT=2.5V
VCOMP=Upper Clamp Voltage,
VMULT=2.5V
Min Typ Max Unit
-0.05 -1.0
μA
30
mV
5
1.6
1.7
1.8
V
200
450
ns
Input Threshold Voltage,
VZCD Rising Edge
Hysteresis Voltage
Upper Clamp Voltage
Lower Clamp Voltage
Source Current Capability
Sink Current Capability
Sink Bias Current
Disable Threshold
Disable Hysterisis
Restart Current After
Disable
VZCD-R (Note 2)
VZCD-RTH
VZCD-H
VZCD-L
IZCD-SR
IZCD-SN
IZCD-B
VZCD-DIS
VZCD-HYS
IZCD-RES
(Note 2)
IZCD=20μA
IZCD=3mA
IZCD=-3mA
1V≤VZCD≤4.5 V
VZCD<VDIS; VCC>VCC-OFF
2.1
V
0.3
0.5
0.7
V
4.5
5.1
5.9
V
4.7
5.2
6.1
0.3
0.65
1
V
-3
-10
mA
3
10
mA
2
μA
150
200
250
mV
100
mV
-100 -200 -300
μA
Drive Output Section
VOH
Dropout Voltage
VOL
Output Voltage Rise Time
tR
Output Voltage Fall Time
tF
Output Clamp Voltage
VO-CLAMP
UVLO Saturation
VOS
Output Over Voltage Section
OVP Triggering Current
Static OVP Threshold
Restart Timer
IOVP
VOVP_TH
Restart Timer
tSTART
IGD-SOURCE=200 mA, VCC=12V
IGD-SOURCE=20 mA, VCC=12V
IGD-SINK=200 mA, VCC=12V
CL=1nF
CL=1nF
IGD-SOURCE=5 mA, VCC=20V
VCC=0 to VCC-ON, ISINK=10mA
2.5
3
V
2
2.6
0.9
1.9
V
40
100
ns
40
100
ns
10
13
15
V
1.1
V
35
40
45
μA
2.1
2.25
2.4
V
70
150
400
μs
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Aug. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
6