AZV832 Datasheet, PDF (5/24 Pages) BCD Semiconductor Manufacturing Limited – Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers

Advance Datasheet
Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV832
1.6V DC Electrical Characteristics
V_CC=1.6V, V_EE=0, V_CM=V_CC/2, T_A=25°C, unless otherwise noted.
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Offset Voltage
V_OS
0.5 2.5 mV
Input Bias Current
I_B
1.0 5.0 pA
Input Offset Current
I_OS
2.0 pA
Input Common-mode Voltage Range V_CM
-0.2
1.8 V
Common-mode Rejection Ratio
Large Signal Voltage Gain
Input Offset Voltage Drift
Output Voltage Swing from Rail
Sink
Output Current
Source
CMRR V_CM=-0.2V to 1.8V
G_V
R_L=10kΩ connect to V_CC/2，
V_O=0.2V to 1.4V
∆V_OS/∆T
V_OL/V_OH
V_ID=0.5V, R_L=1kΩ connect
to V_CC/2
V_ID=0.5V, R_L=10kΩ connect
to V_CC/2
I_SINK V_OUT=V_CC
I_SOURCE V_OUT=0V
55 75
dB
90 110
dB
2.0
µV/ °C
30 50
mV
3 15
8 10
mA
5 8.5
Closed-loop Output Impedance
Z_OUT f=10kHz, G=1 (Note 2)
9
Ω
Power Supply Rejection Ratio
PSRR V_CC=1.6V to 5.0V, V_CM=0.5V 70 80
dB
Supply Current
I_CC V_CM<V_CC-1V, I_OUT=0
140 180 µA
1.6V AC Electrical Characteristics
V_CC=1.6V, V_EE=0, V_CM=V_CC/2, T_A=25°C, unless otherwise noted.
Parameter
Symbol
Conditions
Gain Bandwidth Product
GBP
Slew Rate
SR
Phase Margin
φ_M
Total Harmonic Distortion+Noise THD+N
Voltage Noise Density
e_n
Note 2: G is Closed-Loop Voltage Gain.
R_L=100kΩ
G=1, 1V Step,
C_L=100pF, R_L=10kΩ
R_L=100kΩ
f=1kHz, G=1, V_IN=1V_pp
R_L=10kΩ, C_L=100pF
f=1kHz
Min Typ Max Unit
1.0
MHz
0.32
V/µs
67
Degrees
-70
dB
27
nV/ Hz
Nov. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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