APT13003E_11 Datasheet, PDF (5/9 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
Typical Performance Characteristics (Continued)
Data Sheet
APT13003E
40
35
T =125oC
A
30
25
T =25oC
A
20
15
10
5
0
0.01
0.1
Collector Current I (A)
C
V =5V
CE
V =1V
CE
1
Figure 7. DC Current Gain
10
1
T =125oC
J
0.1
T =25oC
J
0.01
0.1
Collector Current I (A)
C
h =5
FE
1
Figure 8. Collector-Emitter Saturation Voltage
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.1
T =25oC
J
T =125oC
J
h =5
FE
1
Collector Current I (A)
C
Figure 9. Base-Emitter Saturation Voltage
20
18
16
14
12
10
25
V =2V, I =0.5A
CE
C
50
75
100
125
150
Case Temperature (^oC)
Figure 10. h_FE vs. Case Temperature
Aug. 2011 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
5