MBR20H100C_10 Datasheet, PDF (4/11 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Data Sheet
MBR20H100C
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V_R) T_C=162^oC
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20kHz) T_C=160^oC
Non Repetitive Peak Surge Current (Surge Applied at Rated load
Conditions Half Wave, Single Phase, 60Hz)
Operating Junction Temperature (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated V_R)
ESD (Machine Model=C)
ESD (Human Body Model=3B)
Symbol
V_RRM
V_RWM
V_R
I_{F (AV)}
I_FRM
I_FSM
T_J
T_STG
dv/dt
Value
100
10
20
250
175
-65 to 175
10000
>400
>8000
Unit
V
A
A
A
o_C
o_C
V/µs
V
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dP_D/dT_J<1/θ_JA.
Thermal Characteristics
Parameter
Symbol
θ_JC
Maximum Thermal Resistance
θ_JA
Condition
Junction to Case
TO-220-3/
TO-220-3 (2)
TO-220F-3
Junction to Ambient
TO-220-3/
TO-220-3 (2)
Value
2.0
2.5
60
Unit
o_C/W
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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