MBR20150SC Datasheet, PDF (4/10 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150SC
Recommended Operating Conditions
Parameter
Symbol Condition
Value
θ_JC
Junction to Case
TO-220-3/
TO-220-3 (2)
2.0
TO-220F-3
3.0
Maximum Thermal Resistance
θ_JA
Junction
Ambient
TO-220-3/
to _{TO-220-3 (2)}
60
TO-220F-3
60
Unit
°C/W
Electrical Characteristics
Parameter
Maximum Instantaneous Forward
Voltage Drop (Note 3)
Symbol
V_F
Conditions
I_F=10A, T_C=25°C
I_F=10A, T_C=125°C
Rated DC Voltage,
Maximum Instantaneous Reverse
Current (Note 3)
I_R
T_C=125°C
Rated DC Voltage,
T_C=25°C
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Value
0.9
0.75
20
0.05
Unit
V
mA
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4