AZ574_07 Datasheet, PDF (4/9 Pages) BCD Semiconductor Manufacturing Limited – 33V HIGH PRECISE VOLTAGE REFERENCE

Data
Sheet
33V HIGH PRECISE VOLTAGE REFERENCE
Absolute Maximum Ratings (Note 1)
AZ574
Parameter
Cathode Current
Power Dissipation
Storage Temperature
Symbol
I_KA
P_D
T_STG
Value
Unit
40
mA
700 (T_A=75^oC)
mW
-40 to 125
o_C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Operating Ambient Temperature
T_A
Operating Cathode Current
I_KA
Min
Max
Unit
-20
75
o_C
1.5
30
mA
Electrical Characteristics
(T_A=25^oC, unless otherwise specified.)
Parameter
Symbol
Conditions
Min Typ Max Unit
Cathode Voltage
V_KA
I_KA=5mA
31
35
V
Cathode Voltage Temperature Drift
Dynamic Impedance
∆V_KA/∆T
Z_KA
I_KA=5mA, T_A=-20 to 75^oC
(Note 2)
I_KA=5mA, f=1KHz, I_AC=0.5mA
0.6
mV/^oC
5
12
Ω
Note 2: Cathode voltage temperature drift is defined as maximum (worst case) change divided by the total tem-
perature range.
Apr. 2007 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4