AT2140 Datasheet, PDF (4/7 Pages) BCD Semiconductor Manufacturing Limited – High Performance ITVS, 4 I/Os, CI/O-VSS<0.6pF, VCC with Blocking Diodes

Advance Datasheet
High Performance ITVS, 4 I/Os, C_I/O-VSS<0.6pF, V_CC with Blocking Diodes AT2140
Electrical Characteristics
T_A=25ºC, unless otherwise specified.
Parameter
Working Voltage, VCC to VSS
Channel Leakage Current
Reverse Breakdown Voltage, VCC to VSS
Holding Voltage
Clamping Voltage (Lightning) VCC to VSS
(IEC61000-4-5)
I/O to VSS
Trigger Voltage
VCC to VSS
I/O to VSS
ESD Clamping Voltage
VCC to VSS
I/O to VSS
Dynamic Resistance
VCC to VSS
I/O to VSS
Channel Input Capacitance I/O to VSS
Symbol
I_R
V_BR
V_H
Conditions
Pin 5 to Pin 2
V_CC=5V,V_SS=0V
I_BV=1mA
At 12A
At 6A
V_TRIG
At 10A, TLP, 100ns
C_I/O
V_I/O=2.5V,V_CC=5V,
V_SS=0V,f=1MHz
Min Typ Max Unit
-0.7
5.0
V
1
μA
6
V
5.5
V
9.5
V
8.5
V
8.5 9.5
V
8.5 9.5
V
8
V
9
V
0.2
Ω
0.3
Ω
0.525 0.6 pF
Typical Performance Characteristics
T_A=25°C, unless otherwise specified.
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
-60 -40 -20
BV
V
TRIG
V
H
0 20 40 60 80
Temperature (^OC)
100 120 140
Figure 4. BV, Trigger Voltage, Holding Voltage
vs. Temperature
11
10
9
VCC to VSS
8
I/O to VSS
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
Voltage from VCC to VSS (V)
Voltage from I/O to VSS (V)
Figure 5. Current vs. Voltage
Sep. 2012 Rev. 1.0
BCD Semiconductor Manufacturing Limited
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