 English |
|
|
|
|
|
|
|
| APT13005S Datasheet, PDF (4/10 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR | |||
| |||
| ◁ |
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
Thermal Characteristics
Data Sheet
APT13005S
Parameter
Maximum Thermal Resistance
Symbol
θJC
Condition
TO-220F-3
Junction to Case
TO-251
TO-126
Value
4.5
5.0
6.25
Unit
oC/W
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Collector Cut-off Current
(VBE=-1.5V)
Collector-Emitter Sustaining
Voltage (IB=0) (Note 2)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
DC Current Gain (Note 2)
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
Output Capacitance
Current Gain Bandwidth Product
Symbol
ICEV
Condition
VCE=700V
VCEO (sus) IC=100µA
VCE(sat)
VBE(sat)
hFE
ton
ts
tf
COB
fT
IC=1.0A, IB=0.2A
IC=2.0A, IB=0.5A
IC=3.0A, IB=0.75A
IC=1.0A, IB=0.2A
IC=2.0A, IB=0.5A
IC=1.0A, VCE=5.0V
IC=2.0A, VCE=5.0V
IC=2.0A, VCC=125V
IB1=0.4A, IB2=-0.4A
VCB=10V, f=0.1MHz
VCE=10V, IC=0.5A
Note 2: Pulse test for Pulse Width⤠300µs, Duty Cycle ⤠2%.
Min Typ Max Unit
10
µA
450
V
0.3
0.6
V
1.0
1.2
V
1.4
15
35
8
35
0.7
µs
4.5
µs
0.8
µs
35
pF
4
MHz
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese