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| APT13005 Datasheet, PDF (4/10 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR | |||
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HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
Thermal Characteristics
Parameter
Maximum Thermal Resistance
Symbol
θJC
Condition
Junction to Case
TO-220-3/
TO-220-3(2)
TO-220F-3
Data Sheet
APT13005
Value
1.67
4.5
Unit
oC/W
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Collector Cut-off Current
(VBE=-1.5V)
Collector-Emitter Sustaining
Voltage (IB=0) (Note 2)
Symbol
ICEV
Conditions
VCE=700V
VCEO (sus) IC=100µA
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
DC Current Gain (Note 2)
Turn -on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
Output Capacitance
Current Gain Bandwidth Product
VCE(sat)
VBE(sat)
hFE
ton
ts
tf
COB
fT
IC=1.0A, IB=0.2A
IC=2.0A, IB=0.5A
IC=4.0A, IB=1.0A
IC=1.0A, IB=0.2A
IC=2.0A, IB=0.5A
IC=1.0A, VCE=5.0V
IC=2.0A, VCE=5.0V
IC=2A, VCC=125V
IBI=0.4A, IB2=-0.4V
VCB=10V, f=0.1MHz
VCE=10V, IC=0.5A
Note 2: Pulse test for Pulse Width ⤠300µs, Duty Cycle ⤠2%.
Min Typ Max Unit
10
µA
450
V
0.3
0.6
V
0.9
1.1
V
1.3
15
35
8
35
0.8
µs
4.5
µs
0.9
µs
45
pF
4
MHz
Aug. 2010 Rev 1. 1
BCD Semiconductor Manufacturing Limited
4
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