MBR30100C Datasheet, PDF (3/9 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Ordering Information
MBR30100C
-
Data Sheet
MBR30100C
Circuit Type
Package
T: TO-220-3/TO-220-3(2)
TF: TO-220F-3
E1: Lead Free
G1: Green
Blank: Tube
Package
TO-220-3/
TO-220-3(2)
TO-220F-3
Part Number
Lead Free
MBR30100CT-
E1
MBR30100CTF
-E1
Green
MBR30100CT-
G1
MBR30100CTF
-G1
Marking ID
Lead Free
MBR30100CT-
E1
MBR30100CTF
-E1
Green
MBR30100CT-
G1
MBR30100CTF
G1
Packing
Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V_R) T_C = 126°C
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20 kHz) T_C = 126°C
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase,
60Hz)
Operating Junction Temperature Range（Note 2）
Storage Temperature Range
Voltage Rate of Change (Rated V_R)
ESD Ratings: Machine Model = C
Human Body Model =3B
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
T_J
T_STG
dv/dt
Value
100
15
30
200
150
-55 to 150
10000
> 400
> 8000
Unit
V
A
A
A
°C
°C
V/µs
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J <
1/θ_JA.
Apr. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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