AT1140 Datasheet, PDF (3/7 Pages) BCD Semiconductor Manufacturing Limited – General Purpose ITVS, 4 I/Os, CI/O-VSS<0.65pF

Data Sheet
General Purpose ITVS, 4 I/Os, C_I/O-VSS<0.65pF
Absolute Maximum Ratings (Note 1)
AT1140
Parameter
Symbol Min
Typ
Max Unit
Peak Pulse Current (tp 8μs/20μs)
8
A
Peak Pulse Power (tp 8μs/20μs)
75
W
Operating Voltage (DC)
-0.5
6
V
IEC61000-4-2 ESD (Air)
-18
24
kV
IEC61000-4-2 ESD (Contact)
-16
20
kV
IEC61000-4-5 (Lightning)
6
A
75
W
Lead Temperature (Soldering, 10sec)
T_LEAD
260
ºC
Operating Temperature
-55
85
ºC
Storage Temperature
-55
150
ºC
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Electrical Characteristics
T_A=25ºC, unless otherwise specified.
Parameter
Working Voltage, I/O to VSS
Channel Leakage Current
Reverse Breakdown Voltage
Holding Voltage
Clamping
Voltage
(IEC61000-4-5)
Trigger Voltage
(Surge)
ESD Clamping Voltage
Dynamic Reverse Resistance
Dynamic Forward Resistance
Channel Input Capacitance (I/O to VSS)
Symbol
I_R
V_BR
V_H
V_TRIG
R_DIFF-R
R_DIFF-F
C_I/O
Conditions
Operating
Voltage
At 1mA
At 6A
At 20A, TLP,
100ns
V_I/O=2.5V,
V_SS=0V,
f=1MHz
Min
-0.7
5.5
5.5
Typ
10.5
11.5
0.25
0.25
0.5
Max
5.5
0.5
9.5
0.3
0.65
Unit
V
μA
V
V
V
V
V
Ω
Ω
pF
Aug. 2012 Rev. 1.2
BCD Semiconductor Manufacturing Limited
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