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| APT17 Datasheet, PDF (3/10 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE NPN TRANSISTOR | |||
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HIGH VOLTAGE NPN TRANSISTOR
Thermal Characteristics
Parameter
Thermal Resistance (Junction-to-Ambient)
SOT-23
TO-92
Symbol
θJA
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Symbol
Collector Cut-off Current
(VBE=-1.5V)
ICEV
Collector-Emitter Sustaining
Voltage (IB=0)
VCEO (sus)
DC Current Gain
hFE
Conditions
VCE=700V
IC=300µA
IC=300µA, VCE=20V
IC=10mA, VCE=20V
Value
625
250
Data Sheet
APT17
Unit
oC/W
Min Typ Max Unit
10
µA
480
V
20
25
40
20
50
May. 2009 1. 1
BCD Semiconductor Manufacturing Limited
3
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