APT13003S Datasheet, PDF (3/9 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
Thermal Characteristics
Parameter
Thermal Resistance (Junction-to-Case)
Thermal Resistance (Junction-to-Ambient)
For TO-92
For TO-126
For TO-92
For TO-126
Symbol
θ_JC
θ_JA
Value
83.3
6.25
113.6
96
Data Sheet
APT13003S
Unit
o_C/W
o_C/W
Electrical Characteristics
( T_C=25^oC, unless otherwise specified.)
Parameter
Symbol
Collector Cut-off Current
(V_BE=-1.5V)
I_CEV
Conditions
V_CE=700V
Min Typ Max Unit
10
μA
Collector-Emitter Sustaining
Voltage
V_CEO (sus) I_C=100μA
450
V
Collector-Emitter Saturation
Voltage (Note 3)
V_CE (sat)
I_C=0.5A, I_B=0.1A
I_C=1.0A, I_B=0.25A
Base-Emitter Saturation Voltage
(Note 3)
V_BE (sat)
I_C=0.5A, I_B=0.1A
I_C=1.0A, I_B=0.25A
DC Current Gain (Note 3)
h_FE
I_C=0.5A, V_CE=2V
13
I_C=1.0A, V_CE=2V
5
Current Gain Bandwidth Product
f_T
V_CE=10V, I_C=0.1A
4
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
ton
I_C=1A, V_CC=125V, I_B1=0.2A,
ts
I_B2=-0.2A, T_P=25μS
tf
0.3
V
0.6
1.0
V
1.2
30
25
MHz
1.0
3.0
μs
0.5
Note 3: Pulse test for Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Aug. 2011 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
3