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| APT13003L Datasheet, PDF (3/7 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE NPN TRANSISTOR | |||
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HIGH VOLTAGE NPN TRANSISTOR
Thermal Characteristics
Parameter
Thermal Resistance (Junction-to-Ambient)
Symbol
θJA
Data Sheet
APT13003L
Value
156.25
Unit
oC/W
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Symbol
Collector Cut-off Current
(VBE=-1.5V)
ICEV
Collector-Emitter Sustaining
Voltage (IB=0)
VCEO (sus)
Collector-Emitter Saturation
Voltage
VCE(sat)
DC Current Gain
hFE
Conditions
VCE=700V
IC=0.1mA
IC=200mA, IB=40mA
IC=100mA, VCE=10V
IC=300mA, VCE=10V
Min Typ Max Unit
10
μA
450
V
0.5
V
15
23
40
6
15
30
Aug. 2011 Rev 1. 1
BCD Semiconductor Manufacturing Limited
3
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