APT13003H Datasheet, PDF (3/9 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
Thermal Characteristics
Parameter
Thermal Resistance (Junction-to-Case)
Thermal Resistance (Junction-to-Ambient)
For TO-92
For TO-126
For TO-92
For TO-126
Symbol
θ_JC
θ_JA
Value
83.3
6.25
113.6
96
Data Sheet
APT13003H
Unit
o_C/W
o_C/W
Electrical Characteristics
( T_C=25^oC, unless otherwise specified.)
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector Cut-off Current
(V_BE=-1.5V)
I_CEV
V_CE=800V
10
μA
Collector-emitter Sustaining
Voltage (I_B=0)
V_CEO (sus) I_C=100μA
465
V
Collector-emitter Saturation
Voltage (Note 3)
V_CE (sat)
I_C=0.5A, I_B=0.1A
I_C=1.0A, I_B=0.25A
0.17 0.3
V
0.29 0.4
Base-emitter Saturation Voltage
(Note 3)
V_BE (sat)
I_C=0.5A, I_B=0.1A
I_C=1.0A, I_B=0.25A
1.0
V
1.2
DC Current Gain (Note 3)
I_C=0.3A, V_CE=2V
h_FE
I_C=0.5A, V_CE=2V
15
13
17
30
I_C=1.0A, V_CE=2V
5
25
Output Capacitance
C_ob
V_CB=10V, f=0.1MH_Z
16
pF
Current Gain Bandwidth Product
f_T
V_CE=10V, I_C=0.1A
4
MHz
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
ton
I_C=1A, V_CC=125V, I_B1=0.2A,
ts
I_B2=-0.2A, t_P=25μs
tf
0.3
1
1.8
3
μs
0.28 0.4
Note 3: Pulse test for pulse width ≤ 300μs, duty cycle ≤ 2%.
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
3