SBR30A45CTBQ Datasheet, PDF (2/5 Pages) –

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Avalanche Energy
(T_J = +25°C, I_AS = 12.0A, L = 10mH)
Repetitive Peak Avalanche Power
(1µs, 25°C)
Symbol
V_RRM
V_RWM
V_RM
I_O
I_FSM
E_AS
P_ARM
SBR30A45CTBQ
Value
Unit
45
V
30
A
175
A
135
mJ
6900
W
Thermal Characteristics
Characteristic
Typical Thermal Resistance (per leg)
Thermal Resistance Junction to Case (Note 5)
Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol

RΘ_JC
RΘ_JA
T_J, T_STG
Value

1.5
16
-55 to +150
Unit
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Forward Voltage Drop (per leg)
Leakage Current (Note 6)
Symbol
Min
Typ
Max
Unit
Test Condition
V_F


0.48
0.55
0.43

V
I_F = 15A, T_J = +25°C
I_F = 15A, T_J = +125°C
I_R


0.26
0.5
65

mA
V_R = 45V, T_J = +25°C
V_R = 45V, T_J = +125°C
Notes:
5. Polymide PCB 2 oz. Copper, minimum recommended pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be
found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
9
T_J = +150°C
8
7
6
5
4
3
2
1
0
0
5
10
15
20
I_F(AV), AVERAGE FORWARD CURRENT(A)
Figure 1 Forward Power Dissipation
Note: 7. Polymide PCB 2 oz. Copper, minimum recommended pad.
100
10
T_A = 150°C
T_A = 125°C
1
T_A = 85°C
0.1
T_A = 25°C
0.01
T_A = -55°C
0.001
0
200
400
600
800
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated.
SBR30A45CTBQ
Document number: DS36348 Rev. 1 - 2
2 of 5
www.diodes.com
July 2013
© Diodes Incorporated