AP2122 Datasheet, PDF (11/20 Pages) BCD Semiconductor Manufacturing Limited – HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Electrical Characteristics (Continued)
AP2122-3.2 Electrical Characteristics
(V_IN=4.2V, T_J=25^oC, C_IN=1µF, C_OUT=1µF, Bold typeface applies over -40^oC≤T_J≤85^oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Output Current
Load Regulation
Line Regulation
Dropout Voltage
Quiescent Current
Symbol
V_OUT
V_IN
I_OUT
V_RLOAD
V_RLINE
V_DROP
I_Q
Conditions
V_IN=4.2V
1mA≤I_OUT≤30mA
V_IN-V_OUT=1V
V_IN=4.2V
1mA≤ I_OUT≤ 80mA
3.7V≤V_IN≤6V
I_OUT=30mA
I_OUT=10mA
I_OUT=100mA
I_OUT=150mA
V_IN=4.2V, I_OUT=0mA
Min Typ Max Unit
3.136 3.2 3.264 V
150
12
6
V
mA
40 mV
4
16 mV
20
40
150 300 mV
200 400
25
50
µA
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
Short Current Limit
RMS Output Noise
CE "High" Voltage
CE "Low" Voltage
CE Pull-down Internal
Resistance
I_STD
PSRR
V_IN=4.2V
V_CE in OFF mode
Ripple 0.5Vp-p, f=10kHz
V_IN=4.2V
∆V_OUT/∆T
(∆V_OUT/V_OUT)/∆T
I_OUT=30mA
I_LIMIT
V_NOISE
V_OUT=0V
T_A=25^oC
10Hz ≤f≤100kHz
CE input voltage "High"
CE input voltage "Low"
R_PD
0.1
1
µA
70
dB
±320
±100
50
30
µV/^oC
ppm/^oC
mA
µVrms
1.5
V
0.25
V
2.5
5
10
MΩ
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
11