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| AP2111_12 Datasheet, PDF (11/22 Pages) BCD Semiconductor Manufacturing Limited – 600mA CMOS LDO REGULATOR WITH ENABLE | |||
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Electrical Characteristics (Continued)
AP2111-ADJ Electrical Characteristic (Note 2) (Only for SOT-23-5)
VIN=2.5V, CIN=1.0μF (Ceramic), COUT=1.0μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°Câ¤TAâ¤85°C
ranges, unless otherwise specified (Note 3).
Parameter
Symbol
Conditions
Min Typ Max Unit
Reference Voltage
Maximum Output
Current
Load Regulation
Line Regulation
Quiescent Current
VREF
VIN =2.5V, 1mA ⤠IOUT ⤠30mA
VREF
Ã98.5%
IOUT(Max)
VIN=2.5V, VREF=0.788V to 0.812V 600
(â³VOUT/VOUT)
â³IOUT
(â³VOUT/VOUT)
â³VIN
VIN=2.5V, 1mA ⤠IOUT â¤600mA
2.5Vâ¤VINâ¤6V, IOUT=30mA
IQ
VIN=2.5V, IOUT=0mA
0.8
VREF
Ã101.5%
V
mA
0.2
%/A
0.02
%/V
55
80
μA
Standby Current
ISTD
VIN=2.5V, VEN in OFF mode
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
PSRR
(â³VOUT/VOUT)
â³T
Ripple 0.5Vp-p f=100Hz
VIN=2.5V,
IOUT=100mA f=1kHz
IOUT=30mA
TA=-40°C to 85°C
Short Current Limit
ISHORT
VOUT=0V
0.01
65
65
±100
50
1.0
μA
dB
ppm/°C
mA
RMS Output Noise
VNOISE
No Load, 10Hz ⤠f â¤100kHz
50
μVRMS
VEN High Voltage
VEN Low Voltage
VIH
Enable logic high, regulator on
1.5
VIL
Enable logic low, regulator off
0
6.0
V
0.4
Start-up Time
tS
No Load
20
μs
EN Pull Down Resistor
VOUT
Discharge
Resistor
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
RPD
RDCHG
TOTSD
THYOTSD
θJC
Set EN pin at Low
SOT-23-5
3.0
mΩ
60
Ω
160
°C
30
150
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
May 2012 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
11
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