B5817W Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

BAIDU MICRO ELECTRONS CO., LTD.
SOD-123 Plastic-Encapsulate Diodes
B5817W-5819W SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
SOD-123
MARKING: B5817W: SJ
B5818W:SK
B5819W: SL
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol B5817W
B5818W
B5819W
Non-Repetitive Peak Reverse Voltage
V_RM
20
30
40
Peak Repetitive Peak Reverse Voltage
V_RRM
Working Peak Reverse Voltage
DC Blocking Voltage
V_RWM
20
30
40
V_R
RMS Reverse Voltage
V_R(RMS)
14
21
28
Average Rectified Output Current
I_O
1
Peak Forward Surge Current @t=8.3ms
I_FSM
9
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to
Ambient
Junction temperature
Storage Temperature
I_FRM
Pd
R_θJA
TJ
T_STG
1.5
500
250
125
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Unit
V
V
V
A
A
A
mW
℃/W
℃
℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
Test conditions
Min
V(BR)
I_R
I_R= 1mA
V_R=20V
VR=30V
V_R=40V
B5817W
20
B5818W
30
B5819W
40
B5817W
B5818W
B5819W
B5817W I_F=1A
I_F=3A
V_F
B5818W IF=1A
IF=3A
B5819W IF=1A
I_F=3A
C_D
V_R=4V, f=1MHz
Max
Unit
V
1
0.45
0.75
0.55
0.875
0.6
0.9
120
mA
V
V
V
pF
1