MS20 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – SCHOTTKY BARRIER RECTIFIERS(3.0A,20-40V)

MIS/MOS Single Layer Capacitors
Metal Insulator Semiconductor/Metal Oxide Semiconductor
HOW TO ORDER
MS
20
3
S
For applications in RF, Microwave and GHz ranges, AVX
offers MIS/MOS Capacitors. These are Single Layer
Capacitors (SLCs) that use Silicon Nitride or Silicon Dioxide to
produce small, high Q, temperature stable, high break down
voltage, low leakage capacitors. To ease assembly, AVX
offers a wide range of termination styles for epoxy or solder
die attach and subsequent Gold or Aluminum wire thermoson-
ic and ultrasonic bonding. Custom applications and designs
are welcome. Please contact your local representative.
BENEFITS
• MIS, SiON dielectric up to 100V applications
• MOS, SiO₂ dielectric up to 50V applications
• Sizes as small as 10 mils (254µm) squared
• DC to GHz operation
• High Q, low leakage
100
M
3723
W
Series
Code
MS = MOS
MI = MIS
Case Size
Square size
in mils
10, 20, 30, 40
OS = Special
order please
supply design
Working
Voltage
2 = 2 WVDC
4 = 4 WVDC
Z = 10 WVDC
3 = 25 WVDC
5 = 50 WVDC
S = Special
Order
Dielectric Code
S = SiO2 for MOS
Style ONLY
N = SiON for MIS
Style ONLY
Capacitance
EIA Capacitance
Code in pF.
First two digits =
significant figures or
“R” for decimal place.
Third digit = number
of zeros or after “R”
significant figures.
Capacitance
Tolerance
F = ± 1%
J = ± 5%
K = ± 10%
M = ± 20%
Termination Code
1st position top layer
2nd position top bonding layer
3rd position bottom bonding layer
4th position bottom layer
1 = AI
2 = Cr
3 = Au
4 = Ni
5 = Pd
6 = Ta
7 = TaN
8 = TiW
9 = TiWNi
OSOS = Special Order
Please Supply Design
Packaging
W = Antistatic
Waffle Pack
T = Tested Whole
Wafer
D = Tested Wafer
Diced on
Tape
TYPICAL ELECTRICAL SPECIFICATIONS
Material
pF /mm² Typical
TCC
Rated Voltage
Peak Voltage at +25ºC
DF
Voltage Stability
Frequency Range
MIS (SiON)
150
± 60 ppm/ºC
≤100
1.5x Rated
≤ 0.1%
Independent
≤ 40 GHz
MOS (SiO₂)
85
± 30 ppm/ºC
≤ 50
1.5x Rated
≤ 0.1%
Independent
≤ 40 GHz
TEST METHODS
Specification
MIL-STD-883
MIL-STD-883
MIL-STD-202
Parameter
Bond Strength
Shear Strength
Life
Method of Paragraph
2011.7
2019
108
SPECIFIC CAPACITANCE (pF/mm²) VERSUS RATED VOLTAGE
MIS \ MOS Specific Capacitance vs Rated Voltage
140
120
100
80
MOS
60
40
20
0
20
30
40
MIS
50
60
70
80
Rated Voltage (V)
90 100 110