MMBT5551LT1 Datasheet, PDF (1/1 Pages) Avic Technology – SOT-23 Plastic-Encapsulate Transistors

@vic SOT-23 Plastic-Encapsulate Transistors
MMBT5551LT1 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
0.3 W (Tamb=25℃)
Collector current
I_CM:
0.6 A
Collector-base voltage
V_(BR)CBO:
180 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
DEVICE MARKING
MMBT5551LT1=G1
V(BR)CBO
Ic= 100µA, IE=0
180
V
V(BR)CEO
Ic= 0.1mA, IB=0
160
V
V(BR)EBO
IE= 100µA, IC=0
6
V
ICBO
VCB=180V, IE=0
0.1
µA
IEBO
VEB= 4V, IC=0
0.1
µA
hFE(1)
VCE= 5V, IC= 1mA
80
hFE(2)
VCE= 5V, IC=10mA
80
250
hFE(3)
VCE= 5V, IC=50mA
30
VCE(sat)
IC=50 mA, IB= 5mA
0.5
V
VBE(sat)
IC= 50 mA, IB= 5mA
1
V
fT
VCE=10V, IC= 10mA, f=100MHz
80
MHz