MMBT5401LT1 Datasheet, PDF (1/1 Pages) Motorola, Inc – High Voltage Transistor

@vic SOT-23 Plastic-Encapsulate Transistors
MMBT5401LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
0.3 W (Tamb=25℃)
Collector current
I_CM:
-0.6 A
Collector-base voltage
V_(BR)CBO:
-160 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
-
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN
MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter
voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
HFE(1)
HFE(2)
HFE(3)
saturation
VCE(sat)
VBE(sat)
fT
Ic= -100 µA, IE=0
Ic= -1 mA, IB=0
IE= -10µA, IC=0
VCB=-120V, IE=0
VEB=-4V, IC=0
VCE= -5V, IC= -1mA
VCE= -5V, IC=-10mA
VCE= -5V, IC=-50mA
IC=-50mA, IB= -5mA
IC= -50mA, IB= -5mA
VCE= -5V, IC= -10mA
f=30MHz
-160
-150
-5
80
100
50
100
V
V
V
-0.1 µA
-0.1 µA
200
-0.5
V
-1
V
MHz
DEVICE MARKING
MMBT5401LT1=2L