MMBT4403LT1 Datasheet, PDF (1/1 Pages) Motorola, Inc – Switching Transistor

@vic SOT-23 Plastic-Encapsulate Transistors
MMBT4403LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
Collector current
0.3 W (Tamb=25℃)
I_CM:
-0.6 A
Collector-base voltage
V_(BR)CBO:
-40 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Ic=-100µA , IE=0
IC= -1mA , IB=0
IE=-100µA, IC=0
VCB=-35V, IE=0
VCE=-35V, IB=0
VEB=-4V, IC=0
-40
V
-40
V
-5
V
-0.1 µA
-0.1 µA
-0.1 µA
hFE
VCE=-2V, IC= -150mA 100 300
VCE(sat) IC=-150mA, IB=-15mA
-0.4
V
VBE(sat) IC=- 150mA, IB=-15mA
-0.95 V
VCE= -10V, IC= -20mA
fT
200
f = 100MHz
MHz
DEVICE MARKING
MMBT4403LT1=2T