MMBT4401LT1 Datasheet, PDF (1/1 Pages) Motorola, Inc – Switching Transistor

@vic SOT-23 Plastic-Encapsulate Transistors
MMBT4401LT1 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
Collector current
0.3
W (Tamb=25℃)
I_CM:
0.6
A
Collector-base voltage
V_(BR)CBO:
60
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO
Ic=100µA , IE=0
60
V
V(BR)CEO
IC= 1mA , IB=0
40
V
V(BR)EBO
IE=100µA, IC=0
6
V
ICBO
VCB=50V, IE=0
0.1
µA
ICEO
VCE=35V, IB=0
0.1
µA
IEBO
HFE(1)
HFE(2)
VEB=5V, IC=0
0.1
µA
VCE=1V, IC= 150mA
100 300
VCE=2V, IC= 500mA
40
VCE(sat)
IC=150 mA, IB=15mA
0.4
V
VBE(sat)
IC= 150 mA, IB=15mA
0.95
V
VCE= 10V, IC= 20mA
fT
250
f = 100MHz
MHz
DEVICE MARKING
:MMBT4401LT1=2X