MMBT3904LT1 Datasheet, PDF (1/1 Pages) Motorola, Inc – General Purpose Transistor

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MMBT3904LT1
SOT-23 Plastic-Encapsulate Transistors
MMBT3904LT1 TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P_CM:
0.2 W (Tamb=25℃)
Collector current
I_CM:
0.2 A
Collector-base voltage
V_(BR)CBO:
60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
DEVICE MARKING
MMBT3904LT1=1AM
Symbol
Test conditions
MIN MAX UNIT
V(BR)CBO
Ic= 100 µA, IE=0
60
V(BR)CEO
Ic= 1 mA, IB=0
40
V(BR)EBO
IE= 100µA, IC=0
6
ICBO
VCB= 60V, IE=0
ICEO
VCE= 40V, IB=0
IEBO
VEB= 5V, IC=0
HFE(1)
VCE=10V, IC= 1mA
100
HFE(2)
VCE= 1V, IC= 50mA
60
VCE(sat)
IC=50mA, IB= 5mA
VBE(sat)
IC= 50mA, IB= 5mA
VCE= 20V, IC= 10mA
fT
250
f=100MHz
td
VCC=3.0Vdc, VBE=-0.5Vdc
tr
IC=10mAdc, IB1=1.0mAdc
ts
VCC=3.0Vdc, IC=10mAdc
tf
IB1=IB2=1.0mAdc
0.1
0.1
0.1
300
0.3
0.95
35
35
200
50
V
V
V
µA
µA
µA
V
V
MHz
nS
nS
nS
nS
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