MMBT2907ALT1 Datasheet, PDF (1/1 Pages) Avic Technology – SOT-23 Plastic-Encapsulate Transistors

@vic
MMBT2907ALT1
SOT-23 Plastic-Encapsulate Transistors
MMBT2907ALT1 TRANSISTOR (PNP)
FEATURES
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P_CM:
0.3 W (Tamb=25℃)
Collector current
I_CM:
-0.6 A
Collector-base voltage
V_(BR)CBO:
-60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)CBO
Ic= -10µA , IE=0
-60
V(BR)CEO
IC= -10 mA , IB=0
-60
V(BR)EBO
IE= -10µA, IC=0
-5
ICBO
VCB= -50V, IE=0
ICEO
VCB= -3V, IB=0
IEBO
VEB= -3V, IC=0
hFE(1)
VCE=-10V, IC= -150mA 100
hFE(2)
VCE=-10V, IC= -1mA
50
VCE(sat)
IC=-500mA, IB=-50 mA
VBE(sat)
IC= -500mA, IB=-50 mA
Transition frequency
VCE=-20V, IC= -50mA
fT
200
f = 100MHz
MAX
-0.1
-0.1
-0.1
300
-1
-2
UNIT
V
V
V
µA
µA
µA
V
V
MHz
DEVICE MARKING:
MMBT2907ALT1 =2F
Copyright @vic Electronics Corp.
Website http://www.avictek.com