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| MMBT2222ALT1 Datasheet, PDF (1/1 Pages) Avic Technology – SOT-23 Plastic-Encapsulate Transistors | |||
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@vic
MMBT2222ALT1
SOT-23 Plastic-Encapsulate Transistors
MMBT2222ALT1 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.3 W (Tamb=25â)
Collector current
ICM:
0.6 A
Collector-base voltage
V(BR)CBO:
75 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)CBO
Ic= 10µA, IE=0
75
V(BR)CEO
Ic= 10mA, IB=0
40
V(BR)EBO
IE=10µA, IC=0
6
ICBO
VCB=70V, IE=0
ICEO
VCE=35V, IB=0
IEBO
VEB= 3V, IC=0
HFE(1)
VCE=10V, IC= 150mA
100
HFE(2)
VCE=10V, IC= 1mA
50
VCE(sat)
IC=500mA, IB= 50mA
VBE(sat)
IC=500mA, IB= 50mA
Transition frequency
fT
VCE=20V, IC= 20mA
f=100MHz
300
MAX UNIT
V
V
V
0.1
µA
0.1
µA
0.1
µA
300
0.6
V
1.2
V
MHz
DEVICE MARKING:
MMBT2222A = 1P
Copyright @vic Electronics Corp.
Website http://www.avictek.com
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