AV966 Datasheet, PDF (1/3 Pages) Avic Technology – TO-92MOD Plastic-Encapsulate Transistors

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AV966
TO-92MOD Plastic-Encapsulate Transistors
AV966 TRANSISTOR PNP
FEATURE
Power dissipation
P_CM : 0.9
W Tamb=25
Collector current
I_CM : -1.5
A
Collector-base voltage
V_(BR)CBO : -30
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
1.EMITTER
2.COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= -1mA IE=0
-30
Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0
-30
Emitter-base breakdown voltage
V(BR)EBO
IE= -1mA IC=0
-5
Collector cut-off current
ICBO
VCB= -30 V , IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -5V , IC=0
-0.1
DC current gain
hFE 1
VCE=-2 V, IC= -500mA
100
320
Collector-emitter saturation voltage
VCE(sat)
IC= -1.5 A, IB= -0.03A
-2
Base-emitter voltage
VBE
IC= -500 mA, VCE= -2V
-1
Transition frequency
fT
VCE= -2 V, IC= -500mA
100
UNIT
V
V
V
A
A
V
V
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
Range
O
100-200
Y
160-320
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1
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