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| AV9015LT1 Datasheet, PDF (1/1 Pages) Avic Technology – SOT-23 Plastic-Encapsulate Transistors | |||
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@vic
SOT-23 Plastic-Encapsulate Transistors
AV9015LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
0.2 W (Tamb=25â)
Collector current
ICM:
-0.1 A
Collector-base voltage
V(BR)CBO:
-50 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -100µA, IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -0.1mA, IB=0
-45
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-5
Collector cut-off current
ICBO
VCB=-50V, IE=0
Emitter cut-off current
IEBO
VEB= -5V, IC=0
DC current gain
hFE(1)
VCE=-5V, IC= -1mA
200
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB= -10mA
Base-emitter saturation voltage
VBE(sat) IC=-100mA, IB=-10mA
MAX UNIT
V
V
V
-0.1
µA
-0.1
µA
1000
-0.3
V
-1
V
Transition frequency
VCE=-5V, IC= -10mA
fT
150
f=30MHz
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
L
200-450
H
450-1000
DEVICE MARKING
S9015LT1=M6
Copyright @vic Electronics Corp.
Website http://www.avictek.com
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