AV9012LT1 Datasheet, PDF (1/1 Pages) Avic Technology – SOT-23 Plastic-Encapsulate Transistors

@vic
SOT-23 Plastic-Encapsulate Transistors
AV9012LT1 TRANSISTOR (PNP)
FEATURES
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P_CM:
0.3 W (Tamb=25℃)
Collector current
I_CM:
-0.5 A
Collector-base voltage
V_(BR)CBO:
-40
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100µA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -1mA, IB=0
-25
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
IE=-100µA, IC=0
-5
ICBO
VCB=-40 V, IE=0
V
-0.1
µA
Collector cut-off current
ICEO
VCE=-20V, IB=0
-0.1
µA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
µA
DC current gain
hFE(1)
VCE=-1V, IC= -50mA
120
400
hFE(2)
VCE=-1V, IC=-500mA
40
Collector-emitter saturation voltage
VCE(sat) IC=-500 mA, IB= -50mA
-0.6
V
Base-emitter saturation voltage
VBE(sat) IC=-500 mA, IB= -50mA
Transition frequency
fT
CLASSIFICATION OF h_FE(1)
Rank
Range
L
120-200
VCE=-6V, IC= -20mA
150
f=30MHz
H
200-350
-1.2
V
MHz
J
300-400
DEVICE MARKING
S9012LT1=2T1
Copyright @vic Electronics Corp.
Website http://www.avictek.com