AV9012 Datasheet, PDF (1/2 Pages) Avic Technology – TO-92 Plastic-Encapsulate Transistors

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AV9012
TO-92 Plastic-Encapsulate Transistors
AV9012 TRANSISTOR（ PNP ）
FEATURES
Power dissipation
P_CM : 0.625 W（Tamb=25℃）
Collector current
I_CM : -0.5 A
Collector-base voltage
V_(BR)CBO : -40 V
Operating and storage junction temperature range
T_J，T_stg: -55℃ to +150℃
TO—92
1. EMITTER
2. BASE
3.COLLECTOR
1 23
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic= -100μA， I_E=0
-40
V
Collector-emitter breakdown voltage V(BR)_CEO Ic= -0. 1 mA， IB=0
-25
V
Emitter-base breakdown voltage
V(BR)_EBO
I_E= -100μA， I_C=0
-5
V
Collector cut-off current
I_CBO
V_CB=-40 V I_E=0
-0.1 μA
Collector cut-off current
I_CEO
V_CE=- 20 V I_B=0
-0.2 μA
Emitter cut-off current
I_EBO
V_EB= - 5 V， I_C=0
-0.1 μA
DC current gain
H_FE（₁）
H_FE（₂）
V_CE= -1 V, I_C= -50 mA
64
300
V_CE= -1V, I_C =-500 mA
40
Collector-emitter saturation voltage V_CE(sat)
I_C=-500 mA, I_B=-50 mA
-0.6 V
Base-emitter saturation voltage
V_BE(sat)
I_C=-500mA,I_B=-50 mA
-1.2 V
Base-emitter voltage
V_EB
I_E=-100mA
-1.4 V
Transition frequency
V_CE=- 6 V, I_C= -20 mA
f_T
150
f =30MHz
MHz
CLASSIFICATION OF HFE(1)
Rank
D
E
Range
64-91
78-112
F
96-135
G
112-166
H
144-202
I
190-300
Copyright © Avic Electronics Corp.
1
Website: http://www.avictek.com