AV882 Datasheet, PDF (1/3 Pages) Avic Technology – TO-126 Plastic-Encapsulate Transistors

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AV882
TO-126 Plastic-Encapsulate Transistors
AV882 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P_CM : 1.25 W（Tamb=25℃）
Collector current
I_CM : 3 A
Collector-base voltage
V_(BR)CBO : 40 V
Operating and storage junction temperature range
T_J，T_stg: -55℃ to +150℃
TO-126
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic= 100μA， I_E=0
40
V
Collector-emitter breakdown voltage
V(BR)_CEO Ic= 10 mA， I_B=0
30
V
Emitter-base breakdown voltage
V(BR)_EBO I_E= 100 μA， I_C=0
6
V
Collector cut-off current
I_CBO
V_CB= 40 V， I_E=0
1
µA
Collector cut-off current
I_CEO
V_CE= 30 V， I_B=0
1
µA
Emitter cut-off current
I_EBO
V_EB= 6 V， I_C=0
1
µA
DC current gain
H_FE（₁）
H_FE（₂）
V_CE= 2 V, I_C= 1A
V_CE= 2 V, I_C= 100mA
60 400
32
Collector-emitter saturation voltage
V_CE(sat)
I_C= 2A, I_B= 0.2 A
0.5
V
Base-emitter saturation voltage
Transition frequency
V_BE(sat)
f_T
I_C= 2A, I_B= 0.2 A
V_CE= 5V , Ic=0.1A
f =10MHz
2
V
50
MHz
CLASSIFICATION OF HFE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
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1
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