AV8550S Datasheet, PDF (1/2 Pages) Avic Technology – PNP EPITAXIAL SILICON TRANSISTOR

@vic AV8550S PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
APPLICATIONS
*Class B push-pull audio amplifier
*General purpose applications
1
TO-92
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS
SYMBOL
RATING
Collector-base voltage
VCBO
-30
Collector-emitter voltage
VCEO
-20
Emitter-base voltage
VEBO
-5
Collector dissipation(Ta=25°C)
Pc
1
Collector current
Ic
-700
Junction Temperature
Tj
150
Storage Temperature
TSTG
-65 ~ +150
UNITS
V
V
V
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=-100µA,IE=0
-30
Collector-emitter breakdown voltage BVCEO
Ic=-1mA,IB=0
-20
Emitter-base breakdown voltage
BVEBO
IE=-100µA,Ic=0
-5
Collector cut-off current
ICBO
VCB=-30V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,Ic=0
DC current gain(note)
hFE1
VCE=-1V,Ic=-1mA
100
hFE2
VCE=-1V,Ic=-150 mA
120
hFE3
VCE=-1V,Ic=-500mA
40
Collector-emitter saturation voltage VCE(sat)
Ic=-500mA,IB=-50mA
Base-emitter saturation voltage
VBE(sat)
Ic=500mA,IB=-50mA
Base-emitter saturation voltage
VBE
VCE=-1V,Ic=-10mA
Current gain bandwidth product
fT
VCE=-10V,Ic=-50mA
100
Output capacitance
Cob
VCB=10V,IE=0
f=1MHz
TYP
110
9.0
MAX
-1
-100
400
-0.5
-1.2
-1.0
UNIT
V
V
V
uA
nA
V
V
V
MHz
pF
QW-R201-012,A