AV8550 Datasheet, PDF (1/2 Pages) Avic Technology – TO-92 Plastic-Encapsulate Transistors

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AV8550
TO-92 Plastic-Encapsulate Transistors
AV8550 TRANSISTOR（ PNP ）
FEATURES
Power dissipation
P_CM : 1 W（Tamb=25℃）
Collector current
I_CM : -1.5 A
Collector-base voltage
V_(BR)CBO : -40 V
Operating and storage junction temperature range
T_J，T_stg: -55℃ to +150℃
TO—92
1. EMITTER
2. BASE
3.COLLECTOR
1 23
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic= -100 μA ， I_E=0
-40
V
Collector-emitter breakdown voltage V(BR)_CEO I_C= -0.1 mA , I_B=0
-25
Emitter-base breakdown voltage
V(BR)_EBO
I_E= -100 μA， I_C=0
-6
Collector cut-off current
I_CBO
V_CB= -40 V , I_E=0
Collector cut-off current
I_CEO
V_CE= -20 V , I_E=0
Emitter cut-off current
I_EBO
V_EB= -5 V , I_C=0
DC current gain
H_FE（₁）
H_FE（₂）
V_CE= -1V , I_C=-100 mA
85
V_CE=-1V , I_C=-800 mA
40
V
V
-0.1 μA
-0.1 μA
-0.1 ΜA
300
Collector-emitter saturation voltage V_CE(sat)
I_C=-800 m,I_B=-80 mA
-0.5 V
Base-emitter saturation voltage
V_BE(sat)
I_C=-800mA,I_B=-80 mA
-1.2 V
Base-emitter voltage
V_BE
I_E= -1.5A
-1.6 V
Transition frequency
V_CE=-10 V, I_C=-50mA
f_T
190
f =30 MHz
MHz
CLASSIFICATION OF HFE(1)
Rank
B
Range
85-160
C
120-200
D
160-300
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1
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