AV8050S Datasheet, PDF (1/2 Pages) Avic Technology – NPN EPITAXIAL SILICON TRANSISTOR

@vic AV8050S
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The @vic AV8050S is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to @vic AV8550S
MARKING
D9
3
1
2
SOT-23
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
20
Emitter-Base Voltage
VEBO
5
Collector Dissipation(Ta=25℃)
Pc
1
Collector Current
Ic
700
Junction Temperature
Tj
150
Storage Temperature
TSTG
-65 ~ +150
UNIT
V
V
V
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO
Ic=100µA,IE=0
30
Collector-Emitter Breakdown Voltage BVCEO
Ic=1mA,IB=0
20
Emitter-Base Breakdown Voltage
BVEBO
IE=100µA,Ic=0
5
Collector Cut-Off Current
ICBO
VCB=30V,IE=0
Emitter Cut-Off Current
IEBO
VEB=5V,Ic=0
DC Current Gain(note)
hFE1
VCE=1V,Ic=1mA
100
hFE2
VCE=1V,Ic=150 mA
120
hFE3
VCE=1V,Ic=500mA
40
Collector-Emitter Saturation Voltage VCE(sat)
Ic=500mA,IB=50mA
Base-Emitter Saturation Voltage
VBE(sat)
Ic=500mA,IB=50mA
Base-Emitter Saturation Voltage
VBE
VCE=1V,Ic=10mA
TYP
110
MAX
1
100
400
0.5
1.2
1.0
UNIT
V
V
V
uA
nA
V
V
V
QW-R206-001,A