AV8050 Datasheet, PDF (1/2 Pages) Avic Technology – TO-92 Plastic-Encapsulate Transistors

@vic
AV8050
TO-92 Plastic-Encapsulate Transistors
AV8050 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P_CM : 1 W（Tamb=25℃）
Collector current
I_CM : 1.5 A
Collector-base voltage
V_(BR)CBO : 40 V
Operating and storage junction temperature range
T_J，T_stg: -55℃ to +150℃
TO—92
1. EMITTER
2. BASE
3.COLLECTOR
1 23
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic= 100 μA ， I_E=0
40
V
Collector-emitter breakdown voltage V(BR)_CEO I_C= 0.1 mA , I_B=0
25
Emitter-base breakdown voltage
V(BR)_EBO
I_E= 100 μA， I_C=0
5
Collector cut-off current
I_CBO
V_CB= 40 V , I_E=0
Collector cut-off current
I_CEO
V_CE= 20 V , I_B=0
Emitter cut-off current
I_EBO
V_EB= 5 V , I_C=0
DC current gain
H_FE（₁）
H_FE（₂）
V_CE= 1 V , I_C= 100 mA
85
V_CE= 1 V , I_C=800 mA
40
V
V
0.1
μA
0.1
μA
0.1
μA
300
Collector-emitter saturation voltage V_CE(sat)
I_C= 800 mA, I_B= 80 mA
0.5
V
Base-emitter saturation voltage
V_BE(sat)
I_C= 800mA, I_B= 80 mA
1.2
V
Base-emitter voltage
V_BE
I_E= 1.5A
1.6
V
Transition frequency
V_CE= 10 V, I_C= 50mA
f_T
190
f =30 MHz
MHz
CLASSIFICATION OF HFE(1)
Rank
B
Range
85-160
C
120-200
D
160-300
Copyright © Avic Electronics Corp.
1
Website: http://www.avictek.com