AV733 Datasheet, PDF (1/2 Pages) Avic Technology – TO-92 Plastic-Encapsulate Transistors

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AV733
TO-92 Plastic-Encapsulate Transistors
AV733 TRANSISTOR（ PNP ）
FEATURES
Power dissipation
P_CM : 0.25 W（Tamb=25℃）
Collector current
I_CM : -0.1 A
Collector-base voltage
V_(BR)CBO : -60 V
Operating and storage junction temperature range
T_J，T_stg: -55℃ to +150℃
TO—92
1. EMITTER
2. COLLECTOR
3.BASE
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ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic= -5 μA ， I_E=0
-60
V
Collector-emitter breakdown voltage V(BR)_CEO I_C= -1 mA , I_B=0
-50
Emitter-base breakdown voltage
V(BR)_EBO
I_E= -50 μA， I_C=0
-5
Collector cut-off current
I_CBO
V_CB= -60 V , I_E=0
Emitter cut-off current
I_EBO
V_EB= -5 V , I_C=0
V
V
-0.1 μA
-0.1 μA
DC current gain
H_FE（₁）
V_CE= -6 V, I_C= -1mA
90
200
600
Collector-emitter saturation voltage V_CE(sat)
I_C= -100mA, I_B=- 10mA
-0.18 -0.3 V
Transition frequency
V_CE= -6 V, I_C=-10mA
f_T
100
180
f = 30MHz
MHz
CLASSIFICATION OF HFE₍₁₎
Rank
R
Range
90-180
Q
135-270
P
200-400
K
300-600
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