AV5401 Datasheet, PDF (1/2 Pages) Avic Technology – PNP EPITAXIAL SILICON TRANSISTOR

@vic AV5401
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
VCEO=-150V
*Collector Dissipation:
Pc(max)=625mW
*High current gain
APPLICATIONS
*Telephone Switching Circuit
*Amplifier
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
-160
Collector-emitter voltage
VCEO
-150
Emitter-base voltage
VEBO
-5
Collector dissipation
Pc
625
Collector current
Ic
-600
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=-100µA,IE=0
-160
Collector-emitter breakdown voltage BVCEO
Ic=-1mA,IB=0
-150
Emitter-base breakdown voltage
BVEBO
IE=-10µA,Ic=0
-6
Collector cut-off current
ICBO
VCB=-120V,IE=0
Emitter cut-off current
IEBO
VEB=-3V,Ic=0
DC current gain(note)
hFE1
VCE=-5V,Ic=-1mA
80
hFE2
VCE=-5V,Ic=-10mA
80
hFE3
VCE=-5V,Ic=-50mA
80
Collector-emitter saturation voltage VCE(sat)
Ic=-10mA,IB=-1mA
Ic=-50mA,IB=-5mA
Base-emitter saturation voltage
VBE(sat)
Ic=-10mA,IB=-1mA
Ic=-50mA,IB=-5mA
Current gain bandwidth product
fT
VCE=-10V,Ic=-10mA,f=100MHz 100
TYP
MAX
-50
-50
400
-0.2
-0.5
-1
-1
400
UNIT
V
V
V
nA
nA
V
V
MHz
QW-R201-001,A