AV42 Datasheet, PDF (1/2 Pages) Avic Technology – TO-92 Plastic-Encapsulate Transistors

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AV42
TO-92 Plastic-Encapsulate Transistors
A42 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P_CM : 0.625 W（Tamb=25℃）
Collector current
I_CM : 0.3 A
Collector-base voltage
V_(BR)CBO : 300 V
Operating and storage junction temperature range
T_J，T_stg: -55℃ to +150℃
TO—92
1. EMITTER
2. BASE
3.COLLECTOR
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ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)_CBO
V(BR)_CEO
V(BR)_EBO
I_CBO
I_EBO
Ic= 100μA， I_E=0
Ic= 1 mA， I_B=0
I_E= 10μA， I_C=0
V_CB= 200 V I_E=0
V_EB= 3 V， I_C=0
300
V
300
V
5
V
0.25 μA
0.25 μA
H_FE（₁）
V_CE= 10 V, I_C= 1 mA
25
DC current gain
H_FE（₂）
V_CE= 10V, I_C = 10 mA
80
250
H_FE（₃）
V_CE= 10 V, I_C= 50 mA
25
Collector-emitter saturation voltage VCE(sat)
I_C= 20 mA, I_B= 2 mA
0.5 V
Base-emitter saturation voltage
V_BE(sat)
I_C= 20mA, I_B= 2 mA
0.9 V
Transition frequency
V_CE= 5 V, I_C= 10 mA
f_T
50
f =30MHz
MHz
CLASSIFICATION OF HFE₍₂₎
Rank
A
Range
80-100
B₁
100-150
B₂
150-200
C
200-250
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